US 4,000,413
MOS-RAM
- Filed
- May 27, 1975
- Granted
- December 28, 1976
- Assignee
- Intel
- Inventors
- Sau Ching Wong, Siu Keun Tsang
Abstract
Improved circuits for a MOS-RAM including an on chip TTL compatible high-level clock driver and sense amplifier. The driver employs a unique feedback and delay scheme allowing the high-level line to be quickly and efficiently discharged without using a large, high capacitance device. The upward swing of the control signal for the sense amplifier includes a perturbation which increases the sensitivity of the amplifier.
