The Collection
110 United States patents, 1976–2021
From an early MOS-RAM at Intel and the programmable logic devices of Altera’s founding era, to the multi-bit-per-cell and analog flash storage techniques, granted to SanDisk and Samsung, that underpin modern nonvolatile memory.
Browse the collection
Showing 110 of 110 patents
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 11,200,954 · 2021 · Samsung
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 11,114,164 · 2021 · Samsung
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 10,978,159 · 2021 · Samsung
Adaptive parallel writing to nonvolatile memory cells
US 10,535,407 · 2020 · Samsung
Programming nonvolatile memory cells using resolution-based and level-based voltage increments
US 10,468,108 · 2019 · Samsung
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 10,468,107 · 2019 · Samsung
Parallel programming of nonvolatile memory cells
US 9,576,647 · 2017 · Samsung
Reading a multi-bit value from a memory cell
US 9,449,682 · 2016 · Samsung
Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
US 8,027,196 · 2011 · Samsung
Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
US 7,808,820 · 2010 · Samsung
Adaptive operations for nonvolatile memories
US 7,656,710 · 2010 · Samsung
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 7,554,844 · 2009 · SanDisk
Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
US 7,426,138 · 2008 · Samsung
Multi-bit-per-cell flash EEPROM memory with refresh
US 7,397,697 · 2008 · SanDisk
Fabricating bi-directional nonvolatile memory cells
US 7,355,891 · 2008 · Samsung
High data rate write process for non-volatile flash memories
US 7,349,255 · 2008 · SanDisk
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 7,298,670 · 2007 · SanDisk
Analog buffer memory for high-speed digital image capture
US 7,268,809 · 2007 · SanDisk
Contactless bidirectional nonvolatile memory
US 7,227,779 · 2007 · Samsung
Fabricating bi-directional nonvolatile memory cells
US 7,221,591 · 2007 · Samsung
Multi-bit-per-cell flash EEPROM memory with refresh
US 7,170,781 · 2007 · SanDisk
Programming of multi-level memory cells on a continuous word line
US 7,139,192 · 2006 · Samsung
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 7,106,632 · 2006 · SanDisk
Bit line reference circuits for binary and multiple-bit-per-cell memories
US 7,099,188 · 2006 · Samsung
Efficient redundancy system for flash memories with uniformly sized blocks
US 7,092,289 · 2006 · Samsung
File storage and erasure in flash memory
US 7,080,192 · 2006 · Samsung
Periodic refresh operations for non-volatile multiple-bit-per-cell memory
US 7,079,422 · 2006 · Samsung
Contactless bidirectional nonvolatile memory
US 7,061,801 · 2006 · Samsung
Non-uniform programming pulse width for writing of multi-bit-per-cell memories
US 7,054,193 · 2006 · Samsung
High data rate write process for non-volatile flash memories
US 6,944,058 · 2005 · SanDisk
Nonvolatile semiconductor memory device
US 6,937,520 · 2005 · Sharp / Samsung
Erasing storage nodes in a bi-directional nonvolatile memory cell
US 6,914,820 · 2005 · Samsung
Bit line reference circuits for binary and multiple-bit-per-cell memories
US 6,906,951 · 2005 · Samsung
Multi-bit-per-cell flash EEPROM memory with refresh
US 6,898,117 · 2005 · SanDisk
Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US 6,882,567 · 2005 · Samsung
Refresh operations that change address mappings in a non-volatile memory
US 6,856,568 · 2005 · Samsung
Accessing individual storage nodes in a bi-directional nonvolatile memory cell
US 6,826,084 · 2004 · Samsung
Charge pump circuit adjustable in response to an external voltage source
US 6,760,262 · 2004 · SanDisk
Correction of corrupted elements in sensors using analog/multi-level non-volatile memory
US 6,760,068 · 2004 · SanDisk
Non-volatile memory operations that change a mapping between physical and logical addresses when restoring data
US 6,754,128 · 2004 · Samsung
Bi-directional floating gate nonvolatile memory
US 6,747,896 · 2004 · Samsung
Memory with offset bank select cells at opposite ends of buried diffusion lines
US 6,731,539 · 2004 · Samsung
Sectorless flash memory architecture
US 6,662,263 · 2003 · Samsung
Data encryption and signal scrambling using programmable data conversion arrays
US 6,624,773 · 2003 · SanDisk
Flash memory array partitioning architectures
US 6,614,685 · 2003 · Samsung
High data rate write process for non-volatile flash memories
US 6,606,267 · 2003 · SanDisk
Analog/multi-level memory for digital imaging
US 6,594,036 · 2003 · SanDisk
Contactless flash memory with buried diffusion bit/virtual ground lines
US 6,570,810 · 2003 · Samsung
Multi-bit-per-cell memory system with numbers of bits per cell set by testing of memory units
US 6,558,967 · 2003 · Samsung
Adjustable circuits for analog or multi-level memory
US 6,556,465 · 2003 · SanDisk
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 6,549,456 · 2003 · SanDisk
Data management for multi-bit-per-cell memories
US 6,532,556 · 2003 · Samsung
Dynamic refresh that changes the physical storage locations of data in flash memory
US 6,522,586 · 2003 · Samsung
Data encryption and signal scrambling using programmable data conversion arrays
US 6,498,851 · 2002 · SanDisk
Contactless flash memory with shared buried diffusion bit line architecture
US 6,480,422 · 2002 · Samsung
Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
US 6,466,476 · 2002 · Samsung
Programmable impedance device
US 6,456,529 · 2002 · SanDisk
Flash memory with dynamic refresh
US 6,396,744 · 2002 · Samsung
Charge pump circuit adjustable in response to an external voltage source
US 6,370,075 · 2002 · SanDisk
Multi-bit-cell non-volatile memory with maximized data capacity
US 6,363,008 · 2002 · Samsung
Flash memory permitting simultaneous read/write and erase operations in a single memory array
US 6,345,000 · 2002 · SanDisk
Programmable impedance device
US 6,320,788 · 2001 · SanDisk
Non-volatile content addressable memory
US 6,317,349 · 2001 · SanDisk
High data rate write process for non-volatile flash memories
US 6,314,025 · 2001 · SanDisk
Multi-bit-per-cell flash EEPROM memory with refresh
US 6,307,776 · 2001 · SanDisk
Word-line decoder for multi-bit-per-cell and analog/multi-level memories with improved resolution and signal-to-noise ratio
US 6,285,593 · 2001 · SanDisk
Read and write operations using constant row line voltage and variable column line load
US 6,259,627 · 2001 · Samsung
Techniques for storing digital data in an analog or multilevel memory
US 6,208,542 · 2001 · SanDisk
Programmable impedance device
US 6,201,734 · 2001 · SanDisk
Analog memory IC with fully differential signal path
US 6,185,119 · 2001 · SanDisk
Adjustable level shifter circuits for analog or multilevel memories
US 6,184,726 · 2001 · SanDisk
Programmable arrays for data conversions between analog and digital
US 6,169,503 · 2001 · SanDisk
Data encoding for content addressable memories
US 6,166,938 · 2000 · SanDisk
Non-volatile memories with improved endurance and extended lifetime
US 6,160,739 · 2000 · SanDisk
Content addressable memory cell and array architectures having low transistor counts
US 6,157,558 · 2000 · SanDisk
Non-linear mapping of threshold voltages for analog/multi-level memory
US 6,154,157 · 2000 · SanDisk
Multi-bit-per-cell flash EEPROM memory with refresh
US 6,151,246 · 2000 · SanDisk
High data rate write process for non-volatile flash memories
US 6,134,145 · 2000 · SanDisk
Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories
US 6,134,141 · 2000 · SanDisk
Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories
US 6,094,368 · 2000 · SanDisk
Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to-noise ratio
US 6,058,060 · 2000 · SanDisk
High resolution multi-bit-per-cell memory
US 6,038,166 · 2000 · SanDisk
High-bandwidth read and write architectures for non-volatile memories
US 5,969,986 · 1999 · Innovative Memory Systems
Look-ahead erase for sequential data storage
US 5,949,716 · 1999 · SanDisk
Address scrambling in a semiconductor memory
US 5,943,283 · 1999 · SanDisk
Source biasing in non-volatile memory having row-based sectors
US 5,923,585 · 1999 · SanDisk
Multi-bit-per-cell non-volatile memory with error detection and correction
US 5,909,449 · 1999 · SanDisk
Memory architecture for recording of multiple messages
US 5,909,387 · 1999 · SanDisk
Multiple array architecture for analog or multi-bit-cell memory
US 5,896,340 · 1999 · SanDisk
Analog and multi-level memory with reduced program disturb
US 5,818,757 · 1998 · SanDisk
Combined digital write and analog rewrite process for non-volatile memory
US 5,815,425 · 1998 · SanDisk
Testing of an analog memory using an on-chip digital input/output interface
US 5,801,980 · 1998 · SanDisk
Read circuits for analog memory cells
US 5,751,635 · 1998 · SanDisk
Feedback loop for reading threshold voltage
US 5,748,534 · 1998 · SanDisk
Read circuit which uses a coarse-to-fine search when reading the threshold voltage of a memory cell
US 5,748,533 · 1998 · SanDisk
Non-volatile memory with analog and digital interface and storage
US 5,745,409 · 1998 · SanDisk
High resolution analog storage EPROM and flash EPROM
US 5,694,356 · 1997 · SanDisk
Write circuits for analog memory
US 5,687,115 · 1997 · SanDisk
Pipelined record and playback for analog non-volatile memory
US 5,680,341 · 1997 · SanDisk
Digital testing of analog memory devices
US 5,682,352 · 1997 · SanDisk
High resolution analog storage EPROM and flash EPROM
US 5,638,320 · 1997 · SanDisk
Programmable logic device with array blocks with programmable clocking
US 4,912,342 · 1990 · Altera
Bit line sense amplifier for programmable logic devices
US 4,899,070 · 1990 · Altera
Programmable logic devices with spare circuits for use in replacing defective circuits
US 4,899,067 · 1990 · Altera
Programmable logic device with array blocks connected via programmable interconnect
US 4,871,930 · 1989 · Altera
Multifunction flip-flop-type circuit
US 4,864,161 · 1989 · Altera
Programmable logic array device using EPROM technology
US 4,774,421 · 1988 · Altera
Programmable macrocell using EPROM or EEPROM transistors for architecture control in programmable logic circuits
US 4,713,792 · 1987 · Altera
Programmable logic array device using EPROM technology
US 4,617,479 · 1986 · Altera
MOS-RAM
US 4,000,413 · 1976 · Intel
Source Document
The complete list of past U.S. patents