The Collection
110 United States patents, 1976–2021
From Intel’s early 4K DRAM and Altera’s programmable logic to the analog and multilevel Flash memory developed at Invox and MLM. Browse the original drawings, abstracts, and full patent documents behind a career in integrated circuit design.
Browse the collection
Showing 110 of 110 patents
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 11,200,954 · 2021 · Samsung
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 11,114,164 · 2021 · Samsung
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 10,978,159 · 2021 · Samsung
Adaptive parallel writing to nonvolatile memory cells
US 10,535,407 · 2020 · Samsung
Programming nonvolatile memory cells using resolution-based and level-based voltage increments
US 10,468,108 · 2019 · Samsung
Programming nonvolatile memory cells through a series of predetermined threshold voltages
US 10,468,107 · 2019 · Samsung
Parallel programming of nonvolatile memory cells
US 9,576,647 · 2017 · Samsung
Reading a multi-bit value from a memory cell
US 9,449,682 · 2016 · Samsung
Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
US 8,027,196 · 2011 · Samsung
Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
US 7,808,820 · 2010 · Samsung
Adaptive operations for nonvolatile memories
US 7,656,710 · 2010 · Samsung
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 7,554,844 · 2009 · SanDisk
Parallel programming of multiple-bit-per-cell memory cells by controlling program pulsewidth and programming voltage
US 7,426,138 · 2008 · Samsung
Multi-bit-per-cell flash EEPROM memory with refresh
US 7,397,697 · 2008 · SanDisk
Fabricating bi-directional nonvolatile memory cells
US 7,355,891 · 2008 · Samsung
High data rate write process for non-volatile flash memories
US 7,349,255 · 2008 · SanDisk
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 7,298,670 · 2007 · SanDisk
Analog buffer memory for high-speed digital image capture
US 7,268,809 · 2007 · SanDisk
Contactless bidirectional nonvolatile memory
US 7,227,779 · 2007 · Samsung
Fabricating bi-directional nonvolatile memory cells
US 7,221,591 · 2007 · Samsung
Multi-bit-per-cell flash EEPROM memory with refresh
US 7,170,781 · 2007 · SanDisk
Programming of multi-level memory cells on a continuous word line
US 7,139,192 · 2006 · Samsung
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 7,106,632 · 2006 · SanDisk
Bit line reference circuits for binary and multiple-bit-per-cell memories
US 7,099,188 · 2006 · Samsung
Efficient redundancy system for flash memories with uniformly sized blocks
US 7,092,289 · 2006 · Samsung
File storage and erasure in flash memory
US 7,080,192 · 2006 · Samsung
Periodic refresh operations for non-volatile multiple-bit-per-cell memory
US 7,079,422 · 2006 · Samsung
Contactless bidirectional nonvolatile memory
US 7,061,801 · 2006 · Samsung
Non-uniform programming pulse width for writing of multi-bit-per-cell memories
US 7,054,193 · 2006 · Samsung
High data rate write process for non-volatile flash memories
US 6,944,058 · 2005 · SanDisk
Nonvolatile semiconductor memory device
US 6,937,520 · 2005 · Sharp / Samsung
Erasing storage nodes in a bi-directional nonvolatile memory cell
US 6,914,820 · 2005 · Samsung
Bit line reference circuits for binary and multiple-bit-per-cell memories
US 6,906,951 · 2005 · Samsung
Multi-bit-per-cell flash EEPROM memory with refresh
US 6,898,117 · 2005 · SanDisk
Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US 6,882,567 · 2005 · Samsung
Refresh operations that change address mappings in a non-volatile memory
US 6,856,568 · 2005 · Samsung
Accessing individual storage nodes in a bi-directional nonvolatile memory cell
US 6,826,084 · 2004 · Samsung
Charge pump circuit adjustable in response to an external voltage source
US 6,760,262 · 2004 · SanDisk
Correction of corrupted elements in sensors using analog/multi-level non-volatile memory
US 6,760,068 · 2004 · SanDisk
Non-volatile memory operations that change a mapping between physical and logical addresses when restoring data
US 6,754,128 · 2004 · Samsung
Bi-directional floating gate nonvolatile memory
US 6,747,896 · 2004 · Samsung
Memory with offset bank select cells at opposite ends of buried diffusion lines
US 6,731,539 · 2004 · Samsung
Sectorless flash memory architecture
US 6,662,263 · 2003 · Samsung
Data encryption and signal scrambling using programmable data conversion arrays
US 6,624,773 · 2003 · SanDisk
Flash memory array partitioning architectures
US 6,614,685 · 2003 · Samsung
High data rate write process for non-volatile flash memories
US 6,606,267 · 2003 · SanDisk
Analog/multi-level memory for digital imaging
US 6,594,036 · 2003 · SanDisk
Contactless flash memory with buried diffusion bit/virtual ground lines
US 6,570,810 · 2003 · Samsung
Multi-bit-per-cell memory system with numbers of bits per cell set by testing of memory units
US 6,558,967 · 2003 · Samsung
Adjustable circuits for analog or multi-level memory
US 6,556,465 · 2003 · SanDisk
Integrated circuit with analog or multilevel storage cells and user-selectable sampling frequency
US 6,549,456 · 2003 · SanDisk
Data management for multi-bit-per-cell memories
US 6,532,556 · 2003 · Samsung
Dynamic refresh that changes the physical storage locations of data in flash memory
US 6,522,586 · 2003 · Samsung
Data encryption and signal scrambling using programmable data conversion arrays
US 6,498,851 · 2002 · SanDisk
Contactless flash memory with shared buried diffusion bit line architecture
US 6,480,422 · 2002 · Samsung
Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
US 6,466,476 · 2002 · Samsung
Programmable impedance device
US 6,456,529 · 2002 · SanDisk
Flash memory with dynamic refresh
US 6,396,744 · 2002 · Samsung
Charge pump circuit adjustable in response to an external voltage source
US 6,370,075 · 2002 · SanDisk
Multi-bit-cell non-volatile memory with maximized data capacity
US 6,363,008 · 2002 · Samsung
Flash memory permitting simultaneous read/write and erase operations in a single memory array
US 6,345,000 · 2002 · SanDisk
Programmable impedance device
US 6,320,788 · 2001 · SanDisk
Non-volatile content addressable memory
US 6,317,349 · 2001 · SanDisk
High data rate write process for non-volatile flash memories
US 6,314,025 · 2001 · SanDisk
Multi-bit-per-cell flash EEPROM memory with refresh
US 6,307,776 · 2001 · SanDisk
Word-line decoder for multi-bit-per-cell and analog/multi-level memories with improved resolution and signal-to-noise ratio
US 6,285,593 · 2001 · SanDisk
Read and write operations using constant row line voltage and variable column line load
US 6,259,627 · 2001 · Samsung
Techniques for storing digital data in an analog or multilevel memory
US 6,208,542 · 2001 · SanDisk
Programmable impedance device
US 6,201,734 · 2001 · SanDisk
Analog memory IC with fully differential signal path
US 6,185,119 · 2001 · SanDisk
Adjustable level shifter circuits for analog or multilevel memories
US 6,184,726 · 2001 · SanDisk
Programmable arrays for data conversions between analog and digital
US 6,169,503 · 2001 · SanDisk
Data encoding for content addressable memories
US 6,166,938 · 2000 · SanDisk
Non-volatile memories with improved endurance and extended lifetime
US 6,160,739 · 2000 · SanDisk
Content addressable memory cell and array architectures having low transistor counts
US 6,157,558 · 2000 · SanDisk
Non-linear mapping of threshold voltages for analog/multi-level memory
US 6,154,157 · 2000 · SanDisk
Multi-bit-per-cell flash EEPROM memory with refresh
US 6,151,246 · 2000 · SanDisk
High data rate write process for non-volatile flash memories
US 6,134,145 · 2000 · SanDisk
Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories
US 6,134,141 · 2000 · SanDisk
Auto-tracking write and read processes for multi-bit-per-cell non-volatile memories
US 6,094,368 · 2000 · SanDisk
Multi-bit-per-cell and analog/multi-level non-volatile memories with improved resolution and signal-to noise ratio
US 6,058,060 · 2000 · SanDisk
High resolution multi-bit-per-cell memory
US 6,038,166 · 2000 · SanDisk
High-bandwidth read and write architectures for non-volatile memories
US 5,969,986 · 1999 · Innovative Memory Systems
Look-ahead erase for sequential data storage
US 5,949,716 · 1999 · SanDisk
Address scrambling in a semiconductor memory
US 5,943,283 · 1999 · SanDisk
Source biasing in non-volatile memory having row-based sectors
US 5,923,585 · 1999 · SanDisk
Multi-bit-per-cell non-volatile memory with error detection and correction
US 5,909,449 · 1999 · SanDisk
Memory architecture for recording of multiple messages
US 5,909,387 · 1999 · SanDisk
Multiple array architecture for analog or multi-bit-cell memory
US 5,896,340 · 1999 · SanDisk
Analog and multi-level memory with reduced program disturb
US 5,818,757 · 1998 · SanDisk
Combined digital write and analog rewrite process for non-volatile memory
US 5,815,425 · 1998 · SanDisk
Testing of an analog memory using an on-chip digital input/output interface
US 5,801,980 · 1998 · SanDisk
Read circuits for analog memory cells
US 5,751,635 · 1998 · SanDisk
Feedback loop for reading threshold voltage
US 5,748,534 · 1998 · SanDisk
Read circuit which uses a coarse-to-fine search when reading the threshold voltage of a memory cell
US 5,748,533 · 1998 · SanDisk
Non-volatile memory with analog and digital interface and storage
US 5,745,409 · 1998 · SanDisk
High resolution analog storage EPROM and flash EPROM
US 5,694,356 · 1997 · SanDisk
Write circuits for analog memory
US 5,687,115 · 1997 · SanDisk
Digital testing of analog memory devices
US 5,682,352 · 1997 · SanDisk
Pipelined record and playback for analog non-volatile memory
US 5,680,341 · 1997 · SanDisk
High resolution analog storage EPROM and flash EPROM
US 5,638,320 · 1997 · SanDisk
Programmable logic device with array blocks with programmable clocking
US 4,912,342 · 1990 · Altera
Bit line sense amplifier for programmable logic devices
US 4,899,070 · 1990 · Altera
Programmable logic devices with spare circuits for use in replacing defective circuits
US 4,899,067 · 1990 · Altera
Programmable logic device with array blocks connected via programmable interconnect
US 4,871,930 · 1989 · Altera
Multifunction flip-flop-type circuit
US 4,864,161 · 1989 · Altera
Programmable logic array device using EPROM technology
US 4,774,421 · 1988 · Altera
Programmable macrocell using EPROM or EEPROM transistors for architecture control in programmable logic circuits
US 4,713,792 · 1987 · Altera
Programmable logic array device using EPROM technology
US 4,617,479 · 1986 · Altera
MOS-RAM
US 4,000,413 · 1976 · Intel
Source Document
The complete list of past U.S. patents